Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs
نویسندگان
چکیده
After the excellent performance achieved by normally-on AlGaN/GaN high electron mobility transistors (HEMTs), research focus has shifted to normallyoff structures. We explore the advantages offered by the recessed-gate technique using our two-dimensional device/circuit simulator Minimos-NT. Excellent agreement with experimental data is achieved, and theoretical AC performance for different recess-depths is studied.
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